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k246 Datasheet - Toshiba

k246 Silicon N-Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications 2SK246 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperat.

k246 Datasheet (223.87 KB)

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Datasheet Details

Part number:

k246

Manufacturer:

Toshiba ↗

File Size:

223.87 KB

Description:

Silicon n-channel junction type field effect transistor.

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k246 Silicon N-Channel Junction Type Field Effect Transistor Toshiba

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