k246 Datasheet - Toshiba

k246, Silicon N-Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif.

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k246_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

k246

Manufacturer:

Toshiba ↗

File Size:

223.87 KB

Description:

Silicon N-Channel Junction Type Field Effect Transistor

Applications

* 2SK246 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1 nA (max) (VGS =
* 30 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction tem

k246 Distributors

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k246 Silicon N-Channel Junction Type Field Effect Transistor Toshiba

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