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K6A65D TK6A65D

K6A65D Description

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK6A65D Switching Regulator Applications * Low drain-source ON.

K6A65D Applications

* Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
* Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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