TP120H058WS 1200V GaN FET

Description

TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary .
The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform.

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Datasheet Specifications

Part number: TP120H058WS
Manufacturer: Transphorm
File Size: 1.41 MB
Datasheet: TP120H058WS-Transphorm.pdf
Description: 1200V GaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover lo

Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Key Specifications VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max
* 1200 1400 70 QOSS (nC) typ 195 QG (nC) typ 15
* Dynamic on-resistance; see Figures 19 and 20 Cascode Schematic Symbol Feb. 05, 2024 t

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TP120H058WS 1200V GaN FET Transphorm

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