TP120H058WS Datasheet - Transphorm

TP120H058WS 1200V GaN FET

The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen III GaN platform uses advanced epi simpli.

TP120H058WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover lo

TP120H058WS Datasheet (1.41 MB)

TP120H058WS Datasheet Preview — Preview of TP120H058WS PDF

Datasheet Details

Part number:

TP120H058WS

Manufacturer:

Transphorm

File Size:

1.41 MB

Description:

1200v gan fet.

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TAGS

TP120H058WS 1200V GaN FET Transphorm

TP120H058WS Distributor