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TP120H058WS

1200V GaN FET

TP120H058WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover lo

TP120H058WS General Description

The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen III GaN platform uses advanced epi simpli.

TP120H058WS Datasheet (1.41 MB)

Preview of TP120H058WS PDF

Datasheet Details

Part number:

TP120H058WS

Manufacturer:

Transphorm

File Size:

1.41 MB

Description:

1200v gan fet.

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TAGS

TP120H058WS 1200V GaN FET Transphorm

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