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TP120H058WS - 1200V GaN FET

Datasheet Summary

Description

The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Enhanced inrush current capability.
  • Very low QRR.
  • Reduced crossover loss Benefits.
  • Enables AC-DC bridgeless totem-pole PFC designs.
  • Increased power density.
  • Reduced system size and weight.
  • Overall lower system cost.
  • Achieves.

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Datasheet preview – TP120H058WS

Datasheet Details

Part number TP120H058WS
Manufacturer Transphorm
File Size 1.41 MB
Description 1200V GaN FET
Datasheet download datasheet TP120H058WS Datasheet
Additional preview pages of the TP120H058WS datasheet.

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    Full PDF Text Transcription

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    TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen III GaN platform uses advanced epi simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
    Published: |