Datasheet Details
- Part number
- TP120H058WS
- Manufacturer
- Transphorm
- File Size
- 1.41 MB
- Datasheet
- TP120H058WS-Transphorm.pdf
- Description
- 1200V GaN FET
TP120H058WS Description
TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary .
The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen III platform.
TP120H058WS Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover lo
TP120H058WS Applications
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max
* 1200 1400
70
QOSS (nC) typ
195
QG (nC) typ
15
* Dynamic on-resistance; see Figures 19 and 20
Cascode Schematic Symbol
Feb. 05, 2024 t
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