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TP90H180PS 900V GaN FET

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Description

TP90H180PS 900V GaN FET in TO-220 (source tab) .
The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number
TP90H180PS
Manufacturer
Transphorm
File Size
1.27 MB
Datasheet
TP90H180PS-Transphorm.pdf
Description
900V GaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS complian

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