TP90H180PS Datasheet - Transphorm

TP90H180PS 900V GaN FET

The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower g.

TP90H180PS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS complian

TP90H180PS Datasheet (1.27 MB)

TP90H180PS Datasheet Preview — Preview of TP90H180PS PDF

Datasheet Details

Part number:

TP90H180PS

Manufacturer:

Transphorm

File Size:

1.27 MB

Description:

900v gan fet.

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TAGS

TP90H180PS 900V GaN FET Transphorm

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