DAN222 Datasheet, Diode, Transys

DAN222 Features

• Diode Power dissipation PD: 150 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT:

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DAN222

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Transys

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📄 Datasheet

Description:

Switching diode.

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DAN222

Transys

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