RB717F Datasheet, Diode, Transys

RB717F Features

• Diode Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1

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RB717F

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Transys

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📄 Datasheet

Description:

Schottky barrier diode.

TAGS

RB717F

Transys

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