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T1L2003028-SP PowerbandTM LDMOS RF Power Transistor

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Description

T1L2003028-SP 30 W, 28V, 500 MHz *2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, .

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Datasheet Specifications

Part number
T1L2003028-SP
Manufacturer
TriQuint Semiconductor
File Size
405.33 KB
Datasheet
T1L2003028-SP_TriQuintSemiconductor.pdf
Description
PowerbandTM LDMOS RF Power Transistor

Features

* Exceptional Instantaneous band-width performance from 500MHz
* 2GHz
* Increased efficiency results in significant advantages
* Smaller and lighter systems
* Reduced system component costs
* Reduced energy consumption
* Typical Performance rating

Applications

* and is rated at 45Watts P1dB at 2GHz. Figure 1. Available Packages Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R_ JC Value 1.3 Unit °C/W Table 2. Absolute Maximum Ratings
* Parameter Drain-source Voltage Gate-source Voltage Drain Current
* Continuou

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