TGM2635-CP Datasheet (TriQuint Semiconductor) - X-Band 100 W GaN Power Amplifier

TGM2635-CP, X-Band 100 W GaN Power Amplifier

TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) *8 to *0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipa

TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process.

The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power added efficiency.

The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior ther

TGM2635-CP Features

* Frequency Range: 7.9

* 11 GHz

* PSAT: 50 dBm (PIN = 28 dBm)

* PAE: 35% (PIN = 28 dBm)

* Large Signal Gain: 22 dB (PIN = 28 dBm)

* Small Signal Gain: 26 dB

* Bias: VD = 28 V, IDQ = 1.3 A

* Package Dimensions: 19.05 x 19.05 x 4.52 mm