TGM2635-CP X-Band 100 W GaN Power Amplifier

TriQuint Semiconductor

TGM2635-CP Description

TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635 *CP is a packaged X-band, high power amplifier fabricated on .
TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.

TGM2635-CP Features

* Frequency Range: 7.9
* 11 GHz
* PSAT: 50 dBm (PIN = 28 dBm)
* PAE: 35% (PIN = 28 dBm)
* Large Signal Gain: 22 dB (PIN = 28 dBm)
* Small Signal Gain: 26 dB
* Bias: VD = 28 V, IDQ = 1.3 A
* Package Dimensions: 19.05 x 19.05 x 4.52 mm

TGM2635-CP Applications

* X-band Radar
* Satellite Communications

📥 Download Datasheet

TGM2635-CP Datasheet Preview — Preview of TGM2635-CP PDF

Datasheet Details

Part number: TGM2635-CP
Manufacturer: TriQuint Semiconductor
File Size: 924.96 KB
Datasheet: TGM2635-CP-TriQuintSemiconductor.pdf
Description: X-Band 100 W GaN Power Amplifier

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X-Band 100 GaN Power Amplifier TriQuint Semiconductor

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