TGD30N40P - Field Stop Trench IGBT
(TRinno)
TGD30N40P
Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio.
TGD30H10K - N-Channel Enhancement Mode Power MOSFET
(TGD)
Taiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD30H10K uses advanced trench technology and design to .
TGD3A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD10A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD14A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD15A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD24A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD25A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD40A - Current Transducers
(Topstek)
Topstek Current Transducer TGA3A .. TGA40A
TGD3A~40A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa.
TGD40H12K - N-Channel Enhancement Mode Power MOSFET
(TGD)
Taiwan Goodark Technology Co.,Ltd
TGD40H12K
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD40H12K uses advanced trench technology and .
