Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- 650V @TJ = 150 ℃.
- Max. RDS(on) = 0.15Ω.
- Ultra Low gate charge (typ. Qg = 41nC).
- 100% avalanche tested
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
600
22.0.
- 13.9.
- IDM Drain Current.
- Pulsed
(Note 1)
60.
- VGSS Gate-Source voltage
±30
EAS PD TJ, TSTG
TL
Si.
TSF60R150WT-Truesemi.pdf
