TSF7N60M

N-Channel MOSFET

Truesemi

TSF7N60M Features

* 7.0A,600V,Max.RDS(on)=1.3Ω @ VGS =10V

* Low gate charge(typical 29nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR d

TSF7N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF7N60M Datasheet (802.53 KB)

TSF7N60M Datasheet Preview — Preview of TSF7N60M PDF

Datasheet Details

Part number:

TSF7N60M

Manufacturer:

Truesemi

File Size:

802.53 KB

Description:

N-channel mosfet.

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TSF7N60M N-Channel MOSFET Truesemi

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TSF7N60M Features

TSF7N60M General Description

Datasheet Details

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Description:

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