TSP50N06M Datasheet (Truesemi)

TSP50N06M, N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSP50N06M Features

* 50A, 60V, RDS(on) = 0.023Ω @VGS = 10 V

* Low gate charge ( typical 33nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC = 25°Cunless otherwise note