TSP630M

N-Channel MOSFET

Truesemi

TSP630M Features

* 9.5A,200V,Max.RDS(on)=0.40 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSP630M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP630M Datasheet (340.49 KB)

TSP630M Datasheet Preview — Preview of TSP630M PDF

Datasheet Details

Part number:

TSP630M

Manufacturer:

Truesemi

File Size:

340.49 KB

Description:

N-channel mosfet.

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TSP630M N-Channel MOSFET Truesemi

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TSP630M Features

TSP630M General Description

Datasheet Details

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Description:

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