TSP730M Datasheet (Truesemi) - N-Channel MOSFET

TSP730M, N-Channel MOSFET

This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These de

TSP730M Features

* 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V

* Low gate charge ( typical 18nC)

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC = 25°Cunless otherwise not