4612 Datasheet, mosfet equivalent, Tuofeng Semiconductor

4612 Features

  • Mosfet n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 55mΩ (VGS=10V) < 60mΩ (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) < 95m Ω (VGS = -4.5V) D2 D1 S2 1

PDF File Details

Part number:

4612

Manufacturer:

Tuofeng Semiconductor

File Size:

369.02kb

Download:

📄 Datasheet

Description:

Mosfet.

Datasheet Preview: 4612 📥 Download PDF (369.02kb)
Page 2 of 4612 Page 3 of 4612

TAGS

4612
MOSFET
Tuofeng Semiconductor

📁 Related Datasheet

4611 - 60V Dual P+N-Channel MOSFET (Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4611 60V Dual P + N-Channel MOSFET Product Summary N-Channel VDS (V) = 60V ID = 6.3A (VGS=10V) RD.

4616 - MOSFET (Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4616 Product Summary N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V.

4600H - Thick Film Conformal SIPs (Bourns Electronic Solutions)
.. oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ Lead free version available (see How to Order “Termination” opti.

4600M - Thick Film Conformal SIPs (Bourns Electronic Solutions)
.. oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ Lead free version available (see How to Order “Termination” opti.

4600X - Thick Film Conformal SIPs (Bourns Electronic Solutions)
.. oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features ■ ■ ■ ■ ■ Lead free version available (see How to Order “Termination” op.

4604 - RF Chokes (JW Miller)
RF Chokes Special Features 4600 Series Test SRF DCR Part L (uH) Q Freq. (MHz) (Ω) Number ±20% Min. (MHz) Min. Max. 4602 1.0 60 7.96 190 0.05 4604 460.

4604T - Thin Film Conformal SIP (Bourns)
Features s s s s Low profile provides patibility with DIPs Also available in medium profile (4600S .250”) and high profile (4600K - .350”) Marking.

4606 - N and P-Channel Enhancement Mode Power MOSFET (ETC)
sales.Mr.wang13826508770 .sztssd. SOP-8 Plastic-Encapsulate MOSFETS 4606 N and P-Channel Enhancement Mode Power MOSFET Description The 4606 us.

4606 - Complementary High-Density MOSFET (Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm.

460DE08C3 - Micro SD Connector (Multicomp)
PART NO. ECN # REV A REVISIONS DESCRIPTION RELEASED DRAWN Kiran DATE CHECKD DATE APPRVD DATE 14/04/09 460DE08C3 - .. Veena 31/3/0.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts