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TF2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

TF2310 Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline .
SOT-23 G S The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective.

TF2310 Applications

* BVDSS RDS(ON) ID 60V 90mΩ 3A D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current3, VGS @ 4.5V IDM PD@TA=25℃ TSTG TJ Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature R

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Datasheet Details

Part number
TF2310
Manufacturer
Tuofeng Semiconductor
File Size
236.33 KB
Datasheet
TF2310-TuofengSemiconductor.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Tuofeng Semiconductor
Tuofeng Semiconductor TF2310-like datasheet