Additional preview pages of the PHI214-25L datasheet.
Product details
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Symbol
V ES V Em Ic P TOT TJ T ST0
Rating
70 3.0 1.6 40 200 -65 to +200
Units
V V A W “C “C
.3751.011 (9.33t.2))
1
Emitter-Base Voltage Collector.
PHI214-25L Datasheet
