BTA24-600C
Description
NPNPN five-layer structure of silicon bidirectional devices; with independent intellectual property rights of single-sided digging technology, table glass passivation process; multi-layer metallized electrodes on the back; with high blocking voltage and high temperature stability.
3.Pinning Information
UMW BTA24
2.Features vacuum cleaners, power tools and other motor speed controllers; solid state relays; heating controllers (temperature regulation); other phase control circuits.
TO-220A
UTD Semiconductor Co.,Limited .umw-ic.
May.2025
1 of 8
.umw-ic.
UMW BTA24
4.Absolute maximum ratings (TJ=25°C unless otherwise stated)
Parameter
Symbol
Values Units
RMSon-statecurrent(full sine wave)
Non repetitive surge peakon-state current (full cycle,TJ initial=25°C) I 2 t value for fusing Critical rate of rise of on-state current IG=2 x IGT, tr≤100ns Off state repetitive peak voltage Reverse repetitive peak voltage Peak gate current Average gate power dissipation Storage...
