IRLML5203TR
Description
The IRLML5203TR uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a loadswitch or in PWM applications.
2.1Features
VDS (V)=-30V ID=-3A RDS(ON)<85mΩ(VGS=-10V) RDS(ON)<145mΩ(VGS=-4.5V)
4.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
1 2
5.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol VDS VGS ID IDM PD RθJA TJ TSTG
Rating -30 ±20 -3 -24 300 417 150
-55~+150
Units V V A A m W °C/W
°C °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
1 of 10
.umw-ic.
UMW IRLML5203TR
-30V P-Channe I MOSFET
7.Electrical Characteristics TA=25°C
Parameter Static characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate -source...
