P0303BD Datasheet - UNIKC

P0303BD MOSFET

P0303BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID2 87A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 87 55 300 Avalanche Current IAS 80 Avalanche Energy L=0.1mH EAS 320 Power Dissipation TC= 25 °C TC= 100°C PD 48 19 Operating J.

P0303BD Datasheet (462.66 KB)