P0403BDG Datasheet - UNIKC

P0403BDG MOSFET

P0403BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 4mΩ @VGS = 10V ID 84A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 84 67 200 Avalanche Current IAS 66 Avalanche Energy L=0.1mH EAS 220 Power Dissipation TC= 25 °C TC= 100°C PD 51 32 Operating Junc.

P0403BDG-UNIKC.pdf