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P0465CIS Datasheet - UNIKC

P0465CIS MOSFET

P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6Ω @VGS = 10V ID 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy3 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 54 21 Operating Junctio.

P0465CIS Datasheet (698.40 KB)