P1308ATG Datasheet - UNIKC

P1308ATG N-Channel MOSFET

P1308ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 75V 13mΩ @VGS = 10V ID 62A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC= 25 °C TC= 100 °C ID IDM IAS 62 39 200 53 Avalanche Energy L = 0.1 mH EAS 140 Power Dissipation TC= 25 °C TC= 100°C Operating Junction & Storage Temperature Range PD Tj.

P1308ATG Datasheet (447.19 KB)