P2103HVG Datasheet - UNIKC

P2103HVG Dual N Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 21mΩ @VGS = 10V ID 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 8 6 40 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS 26 35 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.28