P2206BD Datasheet - UNIKC

P2206BD N-Channel Transistor

P2206BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ @VGS = 10V ID 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 32 20 100 Avalanche Current IAS 26 Avalanche Energy L=0.1mH EAS 33.8 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Junction & St.

P2206BD Datasheet (759.75 KB)