P3203EVG - P-Channel MOSFET
P3203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 32mΩ @VGS = -10V ID -8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -8 -7 -40 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 15
