P4404EDG Datasheet - UNIKC

P4404EDG P-Channel MOSFET

P4404EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 44mΩ @VGS = -10V ID -20A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -20 -16 A -50 Avalanche Current Avalanche Energy2 IAS -18 EAS 48 mJ Power Dissipation .

P4404EDG Datasheet (489.47 KB)