P6503FM - P-Channel MOSFET
P6503FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.6 -3 -19 Avalanche Current IAS -19 Avalanche Energy L = 0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.5
