PA002FMA - P-Channel MOSFET
PA002FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 100mΩ @VGS = -4.5V ID -3A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3 -2.4 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 0.9 0.6 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UN
