PB5A2BA Datasheet - UNIKC

PB5A2BA MOSFET

PB5A2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 9mΩ @VGS = 4.5V ID 11A PDFN 2X2S 100% RG Test 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 11 9 33 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Operating Junction & Storage Temperature Range .

PB5A2BA Datasheet (774.56 KB)