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PC015BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
150V
300mΩ @VGS = 10V
6A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C
ID
6
TC = 100 °C
4
IDM
15
Avalanche Current
IAS
5.5
Avalanche Engergy
L = 0.1 mH
EAS
1.5
Power Dissipation
TC = 25 °C
PD
25
TC = 100 °C
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS
5
°C / W
Rev 1.
PC015BD Datasheet
