PK650DY MOSFET
PK650DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 2.8mΩ @VGS = 10V 30V 11mΩ @VGS = 10V ID CH. 83A Q2 36A Q1 PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 83 36 52 23 Pulsed Drain Current1 Q2 IDM Q1 130 55 Continuous Drain Current.
