PK676BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 2.2mΩ @VGS = 10V ID 111A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 111 70 150 Continuous Drain Current TA = 25 °C TA= 70 °C ID 24 19 Avalanche Current IAS 69 Avalanche Energy L =0.1mH EAS 2.
