PK6A4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 10.5mΩ @VGS = 10V ID 14A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 37 30 100 Continuous Drain Current TA = 25 °C TA= 70 °C ID 14 11 Avalanche Current IAS 21 Avalanche Energy L =0.1mH EAS 22 .
