PT542BA - N-Channel MOSFET
PT542BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 4mΩ @VGS = 10V ID 135A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID 135 85 IDM 200 Avalanche Current IAS 68 Avalanche Energy L = 0.1 mH EAS 233 Power Dissipation TC= 25 °C TC= 100°C PD 125 50 Op
