TD422BL Datasheet - UNIKC

TD422BL N-Channel Enhancement Mode MOSFET

TD422BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 76A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 76 45 135 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 62 Power Dissipation TC = 25 °C TC = 100 °C PD 60 24 Operating Junction & Storage Temperatu.

TD422BL Datasheet (455.41 KB)