10N65T
UNISONIC TECHNOLOGIES
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10a 650v n-channel power mosfet. Power MOSFET The UT C 10N 65T is a high voltag e a nd high curre nt p ower MOSFET, designe d to hav e better charac teristics, such
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10N65 - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
10N65(F,B,H)
10A mps,650 Volts N-CHANNEL MOSFET
FEATURE
10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% av.
10N65 - N-Channel MOSFET
(LGE)
10N65 650V N-Channel MOSFET.
General Description
ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:201.
10N65 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
10N65
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65 is a high voltage and high current power MOSFET, des.
10N65 - 650V N Channel Power MOSFET
(JINAN JINGHENG)
R
SEMICONDUCTOR
FEATURES
● RDS(ON)<1.0Ω @ VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in pliance with EU RoHS directive.
MECH.
10N65-C - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
10N65-C
Preliminary
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65-C is a high voltage and high curre.
10N65-Q - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
10N65-Q
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advance.
10N65B - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
10N65(F,B,H)
10A mps,650 Volts N-CHANNEL MOSFET
FEATURE
10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% av.
10N65F - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
10N65(F,B,H)
10A mps,650 Volts N-CHANNEL MOSFET
FEATURE
10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% av.
10N65F - GaN Enhancement-mode Power Transistor
(tokmas)
GaN Enhancement-mode Power Transistor
CID10N65F
General description
650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package
Featu.
10N65F - 650V N-Channel Enhancement Mode MOSFET
(EVVO)
10N65F
650V N-Channel Enhancement Mode MOSFET
Description The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar.