BSS84ZDW
UNISONIC TECHNOLOGIES
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P-channel mosfet. These P-Channel e nhancement mode field vertical D -MOS transistors are in a SOT-363 SMD package, and in most applications they requ
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BSS84Z - P-Channel MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
BSS84Z
-0.13A, -50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
These P-Channel enhancement mode f.
BSS84ZT - P-Channel MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD BSS84ZT
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
These P-Channel enhancement mode fi.
BSS84ZW - P-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
BSS84ZW
-0.13A, -50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
These P-Channel enhancement mode .
BSS84 - P-Channel MOSFET
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
BSS84 P-CHANNEL MOSFET
V(BR)DSS
-50 V
RDS(on)MAX
8Ω@-10V
10Ω@.
BSS84 - P-Channel Vertical D-MOS Transistor
(GME)
Production specification
P-Channel Enhancement Mode Vertical D-MOS Transistor BSS84
FEATURES
Voltage controlled p-channel small
Pb
signal switc.
BSS84 - P-channel transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS84 P-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1995 Apr 07 Fi.
BSS84 - SIPMOS Small-Signal Transistor
(Siemens Semiconductor Group)
BSS 84
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8 -2.0 V
Pin 1 G Type BSS 84 Type BSS 84 BSS .
BSS84 - P-Channel MOSFET
(Fairchild Semiconductor)
BSS84 — P-Channel Enhancement Mode Field-Effect Transistor
February 2013
BSS84 P-Channel Enhancement Mode Field-Effect Transistor
Features
-0.13.
BSS84 - P-CHANNEL MOSFET
(Diodes Incorporated)
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -50V
RDS(ON) Max 10Ω @ VGS = -5V
ID TA = +25°C
-130mA
Features and Benefits
• Low O.
BSS84 - Small Signal MOSFET
(ROHM)
BSS84
Pch -60V -0.23A Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
-60V 5.3Ω ±0.23A 350mW
lFeatures
1) Trench MOSFET technology 2) Very fast swit.