Datasheet4U Logo Datasheet4U.com

1NM60-Q

N-CHANNEL MOSFET

1NM60-Q Features

* RDS(ON) < 4.6Ω @ VGS = 10V, ID =0.5A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET TO - 251 TO-252 1 SOT-223

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 1NM60G-AA3-R 1N

1NM60-Q General Description

The UTC 1NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications..

1NM60-Q Datasheet (215.98 KB)

Preview of 1NM60-Q PDF

Datasheet Details

Part number:

1NM60-Q

Manufacturer:

UTC

File Size:

215.98 KB

Description:

N-channel mosfet.

📁 Related Datasheet

1N100 Gold Bonded Diode (BKC)

1N100A Gold Bonded Diode (BKC)

1N102 Gold Bonded Diode (BKC)

1N103 Gold Bonded Diode (BKC)

1N104 Gold Bonded Diode (BKC)

1N1064 SILICON POWER RECTIFIER (Microsemi Corporation)

1N1064 SILICON POWER RECTIFIER (Solid State)

1N1065 SILICON POWER RECTIFIER (Microsemi Corporation)

1N1065 SILICON POWER RECTIFIER (Solid State)

1N1066 SILICON POWER RECTIFIER (Microsemi Corporation)

TAGS

1NM60-Q N-CHANNEL MOSFET UTC

Image Gallery

1NM60-Q Datasheet Preview Page 2 1NM60-Q Datasheet Preview Page 3

1NM60-Q Distributor