Part number:
2NM60-Q
Manufacturer:
UTC
File Size:
242.83 KB
Description:
N-channel mosfet.
* RDS(ON) < 3.1Ω @ VGS = 10V, ID =1.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness 11 TO-220F1 TO-251 1 SOT-223 1 TO-252
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2NM60G-AA3-R
2NM60-Q
UTC
242.83 KB
N-channel mosfet.
📁 Related Datasheet
2NM65 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2NM65
2.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 2NM65 is a Super Junction MOSFET Structure. It u.
2NM120 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2NM120
Preliminary
2.0A, 1200V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 2NM120 is a Super Junction MOS.
2NM70 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2NM70
2.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 2NM70 is an Super Junction MOSFET Structure and .
2NM90 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2NM90
Preliminary
Power MOSFET
2A, 900V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION The UTC 2NM90 is a Super Junc.
2N03L05 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resi.
2N03L05 - TO220 N-Channel MOSFET
(VBsemi)
2N03L05-VB TO220
2N03L05-VB TO220 Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) ().
2N03L20 - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
2N04H4 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
P- TO262 -3-1
SPI80N0.