4P50
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P-channel power mosfet. The 4P50 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with l
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4P30 - P-Ch 30V Fast Switching MOSFET
(Rectron)
RM4P30S6
P -Ch 30V Fast Switching MOSFETs
Description
The RM4P30S6 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and.
4PT06A-03 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-05 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-06 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-08 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-S - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-03 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-05 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-06 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-08 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.