5N120-E3 Datasheet, Mosfet, UTC

5N120-E3 Features

• Mosfet
• RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
• Low Reverse Transfer Capacitance 1
• Fast Switching Capability
• Avalanche Energy Specified
• Impro

PDF File Details

Part number:

5N120-E3

Manufacturer:

UTC

File Size:

250.91kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use

5N120-E3 Application

• Applications 1
• FEATURES0
• RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A
• Low Reverse Transfer Capacitance 1
• Fast S

TAGS

5N120-E3

UTC

📁 Related Datasheet

5N120 - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 5N120 5A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and opera.

5N100-FC - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 5N100-FC 5A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N100-FC provide excellent RDS(ON), low gate charge and.

5N10029 - Automotive MOSFET (Infineon)
IAUA180N10S5N029 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement.

5N105K5 - N-channel Power MOSFET (STMicroelectronics)
STF5N105K5 N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic .

5N150UF - SGF5N150UF (Fairchild Semiconductor)
SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. .

5N0431 - Power-Transistor (Infineon)
IPZ40N04S5-3R1 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V.

5N20A - MOSFET (GOFORD)
GOFORD Description Features VDSS RDS(ON) ID @ 10V(Typ) 200V 0.44 Ω 5A • Fast switching • 100% avalanche tested • Improved dv/dt capability • Ro.

5N20V - GE5N20V (Gemos)
GEMOS .. MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench te.

5N25 - 3.8A 250V LOGIC N-CHANNEL MOSFET (UNISONIC TECHNOLOGIES)
UNISONIC TECHNOLOGIES CO., LTD 5N25 Preliminary Power MOSFET 3.8A, 250V LOGIC N-CHANNEL MOSFET  DESCRIPTION The U TC 5N25 is an N-Cha nnel e nhance.

5N25Z - 3.8A 250V LOGIC N-CHANNEL MOSFET (UNISONIC TECHNOLOGIES)
UNISONIC TECHNOLOGIES CO., LTD 5N25Z Preliminary Power MOSFET 3.8A, 250V N-CHANNEL MOSFET  DESCRIPTION The UTC 5N25Z is an N-Channel enhancement MO.