F17NP055 N-CHANNEL / P-CHANNEL Power MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD F17NP055 Preliminary DUAL ENHANCEMENT MODE (N-CHANNEL / P-CHANNEL) * .
The UTC F17NP055 incorporates a N-channel MOSFET and a P-channel MOSFET enhancement mode silicon gate power MOSFET with Fast Body Diode.

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Datasheet Specifications

Part number: F17NP055
Manufacturer: UTC
File Size: 247.98 KB
Datasheet: F17NP055-UTC.pdf
Description: N-CHANNEL / P-CHANNEL Power MOSFET

Features

* N-CHANNEL: 55V/17A RDS(on) ≤ 44 mΩ @ VGS=10V, ID=8.5A
* P-CHANNEL: -55V/-17A RDS(on) ≤ 134 mΩ @ VGS=-10V, ID=-8.5A
* Fast body diode MOSFET technology
* High switching speed
* SYMBOL Power MOSFET SOP-8 www. unisonic. com. tw Copyright © 2021 Unisonic Technologies Co. , Ltd 1 of

Applications

* such, is designed to have better characteristics. such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to

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F17NP055 N-CHANNEL P-CHANNEL Power MOSFET UTC

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