F2N60 - 600V N-CHANNEL POWER MOSFET

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UTC

F2N60 600V N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – F2N60

Datasheet Details

Part number	F2N60
Manufacturer	UTC
File Size	223.80 KB
Description	600V N-CHANNEL POWER MOSFET
Datasheet	F2N60 Datasheet
Additional preview pages of the F2N60 datasheet.

Product details

Description

The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A.
Fast body diode MOSFET technology.
Ultra Low gate charge (typical 16nC).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET.

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Published: Feb 22, 2015 |