F2N60 Datasheet - UTC

600V N-CHANNEL POWER MOSFET

F2N60 Features

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A

* Fast body diode MOSFET technology

* Ultra Low gate charge (typical 16nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Orderi

F2N60 General Description

The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg.

F2N60 Datasheet (223.80 KB)

F2N60 Datasheet Preview — Preview of F2N60 PDF

Datasheet Details

Part number:

F2N60

Manufacturer:

UTC

File Size:

223.80 KB

Description:

600v n-channel power mosfet.

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F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F2021 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

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F2N60 600V N-CHANNEL POWER MOSFET UTC

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F2N60 Features

F2N60 General Description

Datasheet Details

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Description:

F2N60 Distributor