F2N60 Datasheet, Mosfet, UTC

F2N60 Features

• Mosfet
• RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A
• Fast body diode MOSFET technology
• Ultra Low gate charge (typical 16nC)
• Fast switching capability
• Ava

PDF File Details

Part number:

F2N60

Manufacturer:

UTC

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223.80kb

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📄 Datasheet

Description:

600v n-channel power mosfet. The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed po

F2N60 Application

• Applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

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F2N60

UTC

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