F2N60 Datasheet (UTC) - 600V N-CHANNEL POWER MOSFET

F2N60, 600V N-CHANNEL POWER MOSFET

The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg

F2N60 Features

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A

* Fast body diode MOSFET technology

* Ultra Low gate charge (typical 16nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Orderi