F75NM60Z
DESCRIPTION
The UTC F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
- FEATURES
- RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A
- Fast body diode MOSFET technology
- Low switching losses due to reduced Qrr
- Single Pulse Avalanche Energy Rated
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Avalanche energy tested
- SYMBOL
Power MOSFET
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QW-R205-905.B
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
F75NM60ZL-T47-T
F75NM60ZG-T47-T
TO-247
F75NM60ZL-T474-T
F75NM60ZG-T474-T
TO-247-4
Note: Pin Assignment: G: Gate C: Collector E: Emitter
Power MOSFET
Pin Assignment 1234 GDS DSSG
Packing
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- MARKING
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