F75NM60Z Datasheet (UTC) - 600V N-CHANNEL SUPER-JUNCTION MOSFET

F75NM60Z, 600V N-CHANNEL SUPER-JUNCTION MOSFET

The UTC F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

* FE

F75NM60Z Features

* RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A

* Fast body diode MOSFET technology

* Low switching losses due to reduced Qrr

* Single Pulse Avalanche Energy Rated

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Avalanche energy tested

* SYM