F9N100-FC Datasheet, Mosfet, UTC

F9N100-FC Features

• Mosfet
• RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A
• Fast body diode MOSFET technology
• Low switching losses due to reduced Qrr
• Fast Switching Speeds
• 100%

PDF File Details

Part number:

F9N100-FC

Manufacturer:

UTC

File Size:

199.68kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed pow

F9N100-FC Application

• Applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
• FEATUR

TAGS

F9N100-FC

UTC

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