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F9N100-FC - N-CHANNEL POWER MOSFET

UTC

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Datasheet Details

Part number	F9N100-FC
Manufacturer	UTC
File Size	199.68 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	F9N100-FC-UTC.pdf

F9N100-FC Product details

Description

The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

Features

S.
RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A.
Fast body diode MOSFET technology.
Low switching losses due to reduced Qrr.
Fast Switching Speeds.
100% avalanche tested.
Linear Transfer Characteristics.
High Input Impedance.
Avalanche energy tested.
SYMBOL.

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Published: Mar 3, 2024 |