F9N100-FC

N-CHANNEL POWER MOSFET

UTC

* RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A

* Fast body diode MOSFET technology

* Low switching losses due to reduced Qrr

* Fast Switching Speeds

* 100% avalanche tested

* Linear Transfer Characteristics

* High Input Impedance

* Avalanche energy tested

* SYMBOL

* OR

F9N100-FC

UTC

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N-channel power mosfet.

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F9N100-FC N-CHANNEL POWER MOSFET UTC

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