UFU520 Datasheet - UTC

UFU520 DUAL NPN WIDEBAND SILICON RF TRANSISTOR

UFU520 Features

* Low noise, high breakdown RF transistor

* Minimum noise figure (NF min) = 0.65dB at 900 MHz

* Maximum stable gain 19dB at 900 MHz

* 11GHz fT silicon technology

* EQUIVALENT CIRCUIT 6 3 1 4 2 5

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package

Datasheet Details

UFU520

UTC

201.60 KB

Dual npn wideband silicon rf transistor.

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UFU520 DUAL NPN WIDEBAND SILICON TRANSISTOR UTC

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