UND02R100L Datasheet (UTC) - N-CHANNEL MOSFET

UND02R100L, N-CHANNEL MOSFET

The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

The UTC UND02R100L is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequenc

UND02R100L Features

* RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A

* High Cell Density Trench Technology

* High Power and Current Handling Capability

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package