* Low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
USS4360X Datasheet (214.21 KB)
USS4360X
UTC
214.21 KB
Npn transistors.
UNISONIC TECHNOLOGIES CO., LTD
USS4360X
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
* DESCRIP.
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