UT17N10 - N-CHANNEL POWER MOSFET
UT17N10 Features
* RDS(ON) ≤ 105 mΩ @ VGS=10V, ID=8.5A
* High Switching Speed
* High Cell Density Trench Technology
* SYMBOL Drain Gate Source
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT17N10L-TN3-R UT17N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Pac
